… (between 400 and 700 nm), as a function of rf power density P. The highest resistivity (of
10 8 Ω cm) was obtained for P=5 W/cm 2 . For P around 5 W/cm 2 , the films became close to …

… p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on
solution-processed and p-… Moreover, a more detailed focus analysis will be given concerning …

Human health, environmental protection and safety are just a few examples of humankind's
current main concerns, that drive the scientific community to develop sensors able to monitor …

We report high-performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron
sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the …

… Figure 2b shows the X-ray diffraction pattern with a wider 2θ range for the ZnO film produced
at P =5 Wcm±2. For all the films produced, only the ZnO (002) peak at 2θ ≈ 34 is observed, …

Thin films of copper oxide were obtained through thermal oxidation (100–450C) of
evaporated metallic copper (Cu) films on glass substrates. The X-ray diffraction (XRD) studies …

… However, steps towards better understanding of the physical mechanisms of transport across
the p–n interface, the exploration of advanced p- and n-type oxides featuring high mobility …

This work analyzes the role of processing parameters on the electrical performance of GIZO
films and thin-film transistors (TFTs). Parameters such as oxygen partial pressure, deposition …

Smart textiles consist of discrete devices fabricated from—or incorporated onto—fibres. Despite
the tremendous progress in smart textiles for lighting/display applications, a large scale …

… The work of P. Barquinha was supported by FCT under Fellowship SFRH/BD/17970/2004.
The work of G. Gonçalves was supported by FCT under Fellowship SFRH/BD/27313/2006. …