RT Journal Article SR Electronic T1 Membrane insertion of- and membrane potential sensing by-semiconductor voltage nanosensors: feasibility demonstration JF bioRxiv FD Cold Spring Harbor Laboratory SP 044057 DO 10.1101/044057 A1 Kyoungwon Park A1 Yung Kuo A1 Volodymyr Shvadchak A1 Antonino Ingargiola A1 Xinghong Dai A1 Lawrence Hsiung A1 Wookyeom Kim A1 Z. Hong Zhou A1 Peng Zou A1 Alex J. Levine A1 Jack Li A1 Shimon Weiss YR 2016 UL http://biorxiv.org/content/early/2016/03/16/044057.abstract AB We develop membrane voltage nanosensors that are based on inorganic semiconductor nanoparticles. These voltage nanosensors are designed to self-insert into the cell membrane and optically record the membrane potential via the quantum confined Stark effect, with single-particle sensitivity. We present here the approach, design rules, and feasibility proves for this concept. With further improvements, semiconductor nanoparticles could potentially be used to study signals from many neurons in a large field-of-view over a long duration. Moreover, they could potentially report and resolve voltage signals on the nanoscale.